Improved Infrared Temperature Measurement of RF Devices
نویسندگان
چکیده
The paper describes the infrared (IR) thermal measurement facility at De Montfort University and the use of the facility to make IR temperature measurements on RF devices. Some of the limitations with conventional IR measurements will be described; including effects related to the low emissivity and optical transparency of materials. A novel method for improving the accuracy of IR temperature measurements has been developed. By measuring the level of IR radiation emitted by high emissivity micro-particles, placed in isothermal contact with an electronic device, an indirect estimate of its surface temperature can be obtained. The paper will show how the IR ―micro-particle‖ technique has been used to make improved IR temperature measurements on the gallium arsenide (GaAs) Gunn diode and gallium nitride (GaN) high electron mobility transistor (HEMT).
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